Abstract
ABSTRACTMetal-semiconductor-metal (MSM) memory devices have been made in hydrogenated amorphous silicon carbide (a-SiCx:H). Switching in silicon-rich amorphous silicon alloys is believed to be related to the concentration of defects in the semiconductor material. We have used ion bombardment to introduce a controlled number of damage centres into amorphous silicon carbide. Both analog and digital switching behaviours are reported.
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