Memory Properties of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/ Ba(Zr<sub>0.1</sub>Ti<sub>0.9</sub>)O<sub>3</sub> Thin Films Prepared on Si Substrate

Abstract

In this study, ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and different oxygen concentrations. The surface morphology of deposited thin films is observed from the FESEM images, and the memory windows and leakage current of the Al/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer, respectively. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.