Abstract
Memory characteristics of MOS transistors and MOS diodes with SiO2 films deposited by using the SiH4–H2O system were evaluated by measuring the I–V characteristics, the C–V hysteresis, the shift in threshold voltage (ΔVT) and memory retention capability. These characteristics were compared with those of MNOS transistors. The results indicate that MOIOIIOIIIS structure (OI: SiO2 film deposited using the SiH4–NO2 system, OII: SiO2 film deposited using the SiH4–H2O system, OIII: thermally grown SiO2 film) has a good retention capability, and MOIIOIIIS transistor is more likely to show the shift characteristics of ion drift type than MNOIIIS transistor of the same dimensions. From the various experimental results, it is concluded that memory performance of MOIIOIIIS transistor exhibiting the shift characteristics of ion drift type is better than that of MNOIIIS transistor.
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