Memory Performance Enhancement by Inducing Conductive Channel via Doping

Abstract

Due to the excellent nonvolatile resistance characteristics demonstrated by hafnium oxide, it is the potential to facilitate the use of resistive random access memory. In this paper, an ingenious method using doping to locate conductive channels is presented to improve the stable rheostatic performance of HfO2-based rheostatic memory. Metal particles are located to enhance the electric field locally to spur on conductive filaments in situ so that the resistive parameters Vset and Vreset are reduced, the relative fluctuation value (standard deviation/mean) of the Vset is reduced from 22.57% to 18.16%, and that of Vreset is reduced from 19.59% to 16.77%. Consequently, the device gains more stable resistance switching with a larger resistive window.