Abstract
The electrical performance of Z <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -FET and memory operations of matrix are demonstrated at high temperatures up to 125 °C. The sharp subthreshold slope is maintained and the reliable operation is ensured within the memory window of 229 mV even though the turn on voltage of ‘0’- and ‘1’-states are shifted to lower voltage. The ‘0’-state current remains low while the ‘1’-state current gradually increases as the temperature increases leading to higher current margin. At the elevated temperature, the potential barriers are slightly reduced but does not collapse, which leads to the successful memory operation. However, increasing the temperature over 125 °C, the potential barrier at the ‘0’-state is significantly reduced and causes the failure of memory operation with high ‘0’-state current. The matrix demonstrates reliable memory operations without using selector circuits even at 125 °C.
Highlights
Scaling issues of the conventional DRAM has increased the demand for capacitor-less 1T-DRAM devices [1]-[4]
Novel memory cells based on SOI exhibit great performance for embedded application such as MSDRAM [5]-[7], A2RAM [8]-[10], and Z2-FET [11]-[13]
Matrix operation without using selector has been successfully demonstrated in elevated temperature for the first time to confirm the reliable matrix memory operation
Summary
Scaling issues of the conventional DRAM (dynamic random access memory) has increased the demand for capacitor-less 1T-DRAM devices [1]-[4]. Novel memory cells based on SOI exhibit great performance for embedded application such as MSDRAM [5]-[7], A2RAM [8]-[10], and Z2-FET [11]-[13]. Recent studies have demonstrated memory operations in array structure proving the feasibility of the matrix operation [17]. The main purpose of this work is to experimentally investigate the reliability of Z2-FET device and matrix memory at wider temperature range from 25 °C to 175 °C through DC and transient characteristics. Matrix operation without using selector has been successfully demonstrated in elevated temperature for the first time to confirm the reliable matrix memory operation
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