Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6 heterostructures

Abstract

Ferroelectric field-effect transistors using ZnO:Li films simultaneously as a transistor channel and as a ferroelectric active element have been prepared and studied. We show an opportunity of using the ferroelectric field-effect transistor based on ZnO:Li films in ZnO:Li'LaB6 heterostructure as a bistable memory element for information recording. The proposed structure of a ferroelectric memory cell does not possess the fatigue under repeated readout of single recorded information that will allow increasing the resource of storage devices essentially. DOI: 10.3103/S1068337213030067