Abstract
A nonvolatile flash memory device has been fabricated using carbon nanotubes (CNTs) as a floating gate embedded in HfAlO (the atomic ratio of Hf∕Al is 1:2) high-k tunneling/control oxides and its memory effect has been observed. Capacitance-voltage (C-V) measurements illustrated a 400mV memory window during the double C-V sweep from 3 to −3V performed at room temperature and 1MHz. Further studies on their programming characteristics revealed that electron is difficult to be written into the CNTs and the memory effect of the structures is mainly due to the holes traps. The memory window width can remain nearly unchanged even after 104s stressing, indicating excellent long term charge retention characteristics. We therefore suggest that the CNTs embedded in HfAlO can be potentially applied to floating gate flash memory devices.
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