Abstract
Bottom gated field effect transistors were fabricated using spun films of peripherically substituted liquid-crystalline lutetium phthalocyanine (Lu(PcR8)2) molecules as active layers and the electrical characteristics were found to be sensitive to the molecular orientations depending upon the post-deposition heat treatment of the films. High conductive states were attributed to the formation of a well ordered crystalline structure when as deposited Lu(PcR8)2 films were annealed at 242 °C. Annealing at 125 °C produced a different crystalline of lower order, giving rise to low conductive states. The existence of these two well-defined conducting states makes Lu(PcR8)2 films suitable for the fabrication of storage-class memory devices.
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