Abstract
Abstract Epitaxial ferroelectric heterostructures are proposed which used parent phase of the cuprate high-T c superconductors and the related perovskite semiconductors. Properties of prototy8pe field effect transistor (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10–100 μs at 7 V despite their large feature sizes (100 μm). A new memory effects was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.
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