Abstract
The importance of memory effects in Arrhenius surface diffusion barriers E A is studied within the lattice-gas model. It is found that E A of tracer diffusion is strongly affected by memory effects at finite coverages and low temperatures, where about 10–50% of E A arises from temperature variations in the memory effects. In the Arrhenius barrier of collective diffusion, the memory contribution is also significant but less pronounced than in tracer diffusion. Interpretation of E A's in terms of microscopic activation processes is further discussed.
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