Memory effect of an organic based trilayer structure with Au nanocrystals in an insulatingpolymer matrix

Abstract

The memory effects of gold (Au) nanocrystal (NC) non-volatile memorystructures consisting of polyvinylpyrrolidone (PVP) K-30 polymertunneling and control layers are investigated. The trilayer structure (PV P/Au-NCs + PV P/PV P)on p-type Si substrate was fabricated by spin coating, and transmission electron microscopy studyreveals that the average size of the Au-NCs formed is about 5 nm in diameter. Capacitance–voltage (C–V)measurement on the memory structure shows a counter-clockwise hysteresis loop with a significantflat band voltage shift, revealing a memory effect of the Au-NCs with a charge density of up to1 × 1012 cm − 2 and a flat band voltage shift of 2.0 V. A unique feature of the double loop in theC–V curves suggests double barriers during electron tunneling. TheI–V hysteresis is also characterized, and a switching mechanism of resistive change is discussed.