Abstract
A cellular pattern, obtained from a magnetic bubble lattice, shows memory effect after one field cycle, H m-O- H m. We analyze the loss of memory occuring after many cycles, using image processing to characterize the patterns. We study the evolution of the number of vertices, the mean distance and the total length between them. The excess of length due to curvature of cell edges is proportional, on average, to the cells area, and this can be related to dipolar interactions. The loss of memory, seen in the evolution of the total length between vertices, can be described by the after-effect model, where “degrees of freedom” acquired when the edge of the cells wind up in decreasing field are analogous to thermal fluctuations.
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