Abstract
The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.
Highlights
The memory devices are the essential compartments of most electronic devices in our daily life
The resistive random access memory (ReRAM) can handle the information by resistive switching (RS) effect originated from the conductive filament formation[1], the crystalline-amorphous phase transition[2,3], and the charge storaging/trapping[4,5]
The conventional non-solvent dripping process forms the PbI2-MAI-DMSO intermediate phase by toluene dripping during spin-coating of MAPbI3/GBL (γ-butyrolactone)/DMSO solution because toluene does not dissolve the MAPbI3 organic-inorganic hybrid perovskite (OHP) film and is miscible with DMSO so that toluene can induce PbI2-MAI-DMSO intermediate phase and removes the excess DMSO except for DMSO involving the formation of the intermediate phase
Summary
Formation of MAPbI3 OHP film by non-solvent inter-diffusion controlled dripping process. (b) corresponding I-V curves of 5 marked positions, (c) HRS (red) and LRS (blue) at 0.25 Vro with retention time, (d) CAFM image of MAPbI3 film with Cr/Au coated tip biases of 1 V, (e) the response current signals at the intragrain with respect to the repeated write/read/delelet/re-write process: upper signal = response current, lower signal = applied bias voltage, (c) the same signals for the grain boundary.
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