Memory device based on MoS2-polyvinyl alcohol for simulating synaptic behavior

Abstract

A memory device based on MoS2-polyvinyl alcohol was fabricated. As a good dispersant, polyvinyl alcohol solution can disperse 2D layered materials more evenly in the solution. The 19 states of the device conductance are modulated step by step by direct current scanning, which makes it possible to perform the computing task in memory. Then, the presence of conductive filaments allows the resistance state of the memristor to be dynamically transformed, which is similar to some basic behavior of biological synapses. Further, a variety of conductivity states such as short-term potentiation, short term depression, long term potentiation and long-term depression behavior are modulated by applying voltage to simulate the basic behavior of biological synapses. Finally, the paired pulse facilitation, paired pulse depression, spiking timing dependent plasticity and spiking voltage dependent plasticity behaviors of biological synapses are simulated in memristor devices.