Abstract
In this paper, we demonstrated memory and energy storage dual operation in GeS2/Ag conducting bridge RAM. Both operations are based on electrochemical reactions and Ag diffusion in the GeS2 electrolyte. Depending on specific bias and current conditions, the same device can be used for data or energy storage: in memory mode, Ag-based filament is formed in GeS2, while in energy storage mode, Ag bulk diffusion is achieved. Voltage sweep and constant current stress cycling modes for energy storage are evaluated, and the total stored charge is quantified. These obtained results open the path for new autonomous or ultra-low power circuits, integrating dual operation devices composed of the same stack, where energy storage devices could provide energy to the memory array.
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