Abstract
The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002)- and (100)-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100)-oriented AlN thin films are better than those of (002)-oriented thin films. Besides, the interface and interaction between the silicon and (100)-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100)-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100)-oriented AlN thin films was induced by many dipoles and large electric field applied.
Highlights
The (100)-oriented aluminum nitride (AlN) thin films were well deposited onto p-type Si substrate by radio frequency (RF) magnetron sputtering method
From the XRD pattern, we found that the AlN thin films exhibited polycrystalline structure
According to Joint Committee for Powder Diffraction Studies (JCPDS) card of AlN material, the (100), (002), and (101) peaks were observed in the XRD pattern
Summary
The various functional thin films were widely focused on the applications in nonvolatile random access memory (NvRAM), such as smart cards and portable electrical devices, utilizing excellent memory characteristics, high storage capacity, long retention cycles, low electric consumption, nonvolatility, and high speed readout. The high volatile pollution elements and high fabrication cost of the complex composition material were serious difficult problems for applications in integrated circuit semiconductor processing. For this reason, the simple binary metal oxide materials such as ZnO, Al2O3, TiO2, and Ta2O5 were widely considered and investigated for the various functional electronic product applications in resistance of random access memory devices [10,11,12]. The physical and electrical characteristics of (100)-oriented AlN thin films were well developed and investigated in the metal-insulatorsemiconductor (MIS) structure. 105 mm 95 mm 85 mm 75 mm 65 mm Figure 1: Metal insulator semiconductor (MIS) structure using asdeposited (100)-oriented AlN thin films. We will show that (100)-oriented AlN thin film is a candidate for fabrication of the memory devices
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