Memory and Electrical Properties of (100)‐Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Abstract

The (100)‐oriented aluminum nitride (AlN) thin films were well deposited onto p‐type Si substrate by radio frequency (RF) magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as‐deposited (002)‐ and (100)‐oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100)‐oriented AlN thin films are better than those of (002)‐oriented thin films. Besides, the interface and interaction between the silicon and (100)‐oriented AlN thin films was serious important problem. Finally, the current transport models of the as‐deposited and annealed (100)‐oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100)‐oriented AlN thin films was induced by many dipoles and large electric field applied.