Abstract
We describe a method to correct for magnification error in membrane masks by applying extra stress in a pattern calculated by comformal mapping. The calculational results show this method provides less than 3 nm residual error in 5 ppm correction with a square-shaped membrane. We also show this method is easily expandable to the anisotropic case. Furthermore, we point out that this method enables one to obtain a thermal-distortion-free mask.
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