Abstract
physica status solidi (a)Volume 106, Issue 2 p. K123-K127 Short Note Melting temperature of amorphized silicon heated by nanosecond laser radiation G. D. Ivlev, G. D. Ivlev Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this authorV. L. Malevich, V. L. Malevich Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this authorV. V. Zhidkov, V. V. Zhidkov Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this author G. D. Ivlev, G. D. Ivlev Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this authorV. L. Malevich, V. L. Malevich Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this authorV. V. Zhidkov, V. V. Zhidkov Institute of Electronics, Academy of Sciences of the Belorussian SSR, Minsk Search for more papers by this author First published: 16 April 1988 https://doi.org/10.1002/pssa.2211060242Citations: 2 Logoiskii Trakt 22, SU-220841 Minsk, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume106, Issue216 April 1988Pages K123-K127 RelatedInformation
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