Abstract
Determination of melting temperature by spectroradiometric technique, aided by visual observation of onset of melting by track formation method employing an infrared CO2 laser, was carried out. Melting temperatures of SrTiO3 and MgO single crystals and silicon wafer samples obtained by this novel technique are reported. Melting temperatures obtained by this method are within 2% of the reported standard values. These values are used to validate temperature measurements carried out in laser heated diamond anvil cell experiments.
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