Abstract
Determination of melting temperature by spectroradiometric technique, aided by visual observation of onset of melting by track formation method employing an infrared CO2 laser, was carried out. Melting temperatures of SrTiO3 and MgO single crystals and silicon wafer samples obtained by this novel technique are reported. Melting temperatures obtained by this method are within 2% of the reported standard values. These values are used to validate temperature measurements carried out in laser heated diamond anvil cell experiments.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
