Abstract
At substrate temperature (TS) close to melting point of Sn (TSn) rapid incorporation of metallic dopants in significant amount introduces sharp rise in mobility (μ) and concentration (ne) of charge carriers, leading to substantial reduction in resistivity (ρ); simultaneous sharp widening in optical gap (Eg) results in optimum Figure-of-Merit (Φ). The Eg vs. ne2/3 plot demonstrates two distinct regimes of TS across TSn, leading to higher reduced effective mass of charge carriers, mvc∗ by 0.072m0 owing to rapid incorporation of Sn4+ at substitutional site of In3+ in In2O3 matrix. Consequently, the self-energy due to electron-impurity scattering rises and/or the material self-converts to an alloy-like ensemble. On further increase in TS, Φ reduces due to enhanced optical absorption by metallic dopants and dopant induced defects, as noted by enhanced Urbach-energy (EU). Rather than any arbitrary TS, TSn has been demonstrated as an optimal growth temperature for ITO films grown by RF magnetron sputtering.
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