Abstract
In this paper we report on transient conductance measurements during melting and solidification of thin silicon films on foreign substrates, which were irradiated with an excimer laser. The silicon films were deposited on borosilicate float glass or single crystal silicon wafers that were coated with different intermediate layers. Our results show that the laser fluence required to melt the entire Si layer is mainly determined by the silicon–substrate interfacial thermal resistance and not by the heat conductivity of the bulk substrate. The solidification velocity, on the other hand, is strongly influenced by the heat conductivity of the bulk substrate and reaches a maximum value of 0.95m/s for c-Si compared to 2.19m/s for borosilicate float glass.
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