Abstract
In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction (BHJ) photodiode. To prepare the BHJ blend, poly(2-methoxy-5(2′-ethylhexyloxy) phenylenevinylene (MEH-PPV) and aluminum-tris-(8-hydroxyquinoline) (Alq3) are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly(3, 4-ethylendioxythiophene):poly(styrensulfonate) (PEDOT:PSS) is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photosensitive blend is later spun coated on the PEDOT:PSS layer, followed by the lithium fluoride (LiF) and aluminium (Al) thin films deposition by thermal evaporation. The optical properties of the MEH-PPV:Alq3 blend thin films are investigated using photoluminescence (PL) and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value ∼ 8 mA/W at 3 V is found and the ratio of photo-current to dark current (IPh/IDark) is found to be 1.24.
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