Abstract

This paper describes a set of power amplifier (PA) modules containing InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama large millimeter array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

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