Abstract
Indium arsenide nanocrystals were prepared for the first time by one-step mechanochemical synthesis from elemental arsenic and indium by high-energy milling up to 90min. The InAs nanoparticles consist of crystallites with cubic zinc-blende structure. Although, most of the crystals show defects, defect-free ones were found as well. The transverse and the longitudinal optical phonon frequency modes for InAs nanocrystals were found at 215cm−1 and 243.4cm−1, respectively. The maximum emission peak was located at 930nm.
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