Abstract
In this study, CuInS2/ZnS nanocrystals were synthesized by a two-step mechanochemical synthesis for the first time. In the first step, tetragonal CuInS2 was prepared from copper, indium and sulphur precursors. The obtained CuInS2 was further co-milled with zinc acetate dihydrate and sodium sulphide nonahydrate as precursors for cubic ZnS. Structural characterization of the CuInS2/ZnS nanocrystals was performed by X-ray diffraction analysis, Raman spectroscopy and transmission electron microscopy. Specific surface area of the product (86 m2/g) was measured by low-temperature nitrogen adsorption method and zeta potential of the particles dispersed in water was calculated from measurements of their electrophoretic mobility. Optical properties of the nanocrystals were determined using photoluminescence emission spectroscopy.
Highlights
Ternary metal chalcogenide nanocrystals have attracted considerable interest in the past decade because of their numerous applications in photoelectronic, thermoelectric devices and biotechnology [1,2,3,4,5]
The structural and optical properties of CuInS2 /ZnS quantum dots (QDs) were investigated for application as light-emitting diodes [15,16] and it has been shown that large-scale synthesis of highly emissive and photostable nanocrystals is possible in hybrid flow reactor [17]
Several chalcogenide/ZnS nanocrystals obtained by mechanochemical synthesis by our research group was published in several papers [27,28,29,30,31,32]
Summary
Ternary metal chalcogenide nanocrystals have attracted considerable interest in the past decade because of their numerous applications in photoelectronic, thermoelectric devices and biotechnology [1,2,3,4,5]. Copper indium disulphide (CuInS2 (CIS)) is a ternary chalcogenide semiconductor from the chalcopyrite family, extensively studied due to its high absorption coefficient, suitable band gap, good radiation stability, easy conversion of n/p carrier type, low toxicity, large Stokes shifts, and high emission intensities [6,7]. Recent works on CIS QDs have found procedures to increase quantum yields and photoluminescence intensities [12,13]. Their combination with another inorganic semiconductor with a wider band gap (ZnS) can lead to even better optical properties due to elimination of surface non-radiative recombination defects. Magnetic CuInS2 -ZnS nanocomposites for bioimaging were prepared [18,19]
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