Abstract
Bismuth oxyiodide is one of the bismuth-based semiconductors which exhibits narrow band gaps and excellent visible light response, however modification strategies are usually desired for improving its photocatalytic reactivity. In this context, introduction of valuable components into the interlayer of BiOI is expected to work, considering its typical layered structure. In this case, mechanochemical synthesis of BiOI, with simultaneous introduction of lanthanum into its interlayer to form Bi1-xLaxOI, was conducted for the first time, and arsenic (As(III)) was selected to evaluate the photocatalytic reactivity, demonstrating excellent reaction efficiency for arsenic oxidation under a mild condition. Characterizations confirmed the incorporation of La and the presented well crystalline structure of Bi1-xLaxOI, and revealed its better visible light absorption capacity than raw BiOI. Besides the excellent electronic conductivity of Bi0.9La0.1OI, photogenerated holes (h+) and superoxide radical species (·O2-) were characterized by electron spin resonance (ESR) test, to act as predominant reactive groups during the photo-induced oxidation reaction. These findings provided a novel concept for the interlayer decoration of BiOI, and offered an alternative approach to develop its potential application for the removal of hazardous arsenic pollutants.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
