Abstract
Inorganic resists are promising for nanomanufacturing because of their potential for high-resolution and low line-edge roughness patterning and exceptional sensitivity to extreme ultraviolet (EUV) radiation. Hafnium oxide peroxide hydroxide sulfate (HafSOx) is a model EUV inorganic photoresist, wherein the EUV absorption coefficients for hafnium and O are much higher than for conventional polymer resists. Absorption of EUV radiation leads to electron emission that results in the HafSOx solubility change. We used desorption-based techniques to elucidate thermal- and radiation-induced processes that contribute to the HafSOx solubility switch. We found that low kinetic energy electrons render HafSOx insoluble and result in the desorption of molecular O2. Electron-stimulated desorption and postexposure Raman spectroscopy indicate similar kinetics for peroxide loss in HafSOx. Temperature-programmed desorption studies found that peroxide ligand desorption is best characterized as first order, with a broad distr...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
