Abstract
Copper indium disulfide (CuInS2) single crystals are prepared by the chemical vapour transport technique and characterised by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FESEM), and high resolution transmission electron microscopy (HRTEM). The XRD outcome reveals tetragonal lattice structure. The EDS result confirms that the sample is near stoichiometry, while the FESEM and HRTEM micrographs show multilayered opaque crystals. The lattice fringe arrangement reveals d-spacing of 0.32 nm, which matches the d-spacing of primary peak (112) of XRD. Electrical resistivity value decreases as temperature varies from 303 K to 423 K, confirming the crystal is semiconducting. The negative signs in the Hall coefficient (−8.49 × 105 cm3·C−1) and Seebeck coefficient (−148 μV·K−1) confirm n-type nature. The maximum figure of merit (zT) is predicted as 3.99 × 10−4 at 423 K. It suggests that CuInS2 has the prospective to be used in thermoelectric power generation.
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