Abstract
Several examples are provided where the reaction mechanisms of atomic layer deposition (ALD) processes have been characterized by a combination of surface-sensitive techniques. In the first, a proposal is advanced for the layer-by-layer growth of metal films using metal carbonyl precursors and hydrogen as a carbon monoxide displacement agent. For copper film growth, the use of amidinate complexes has being characterized. A third example comprises the deposition of TiN films from TiCl4 and ammonia. Finally, the use of Zr(EtMe)4 as a precursor for zirconium nitride ALD film growth on high surface-area silica is briefly explored.
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