Mechanisms that Explain Short-Channel Effects of Sub-50-nm-Channel Ultra-Thin Symmetric Double-Gate SOI MOSFET

Abstract

Threshold voltage behaviors of the short-channel ultra thin symmetric double-gate (SDG) SOI MOSFET having a thin SOI body are simulated using the hydrodynamic transport model. We first propose models of threshold voltage and surface potential at the threshold that triggers the conventional drain-induced barrier lowering (DIBL) effect. From detailed analyses of device operations, it is demonstrated that the drain-induced potential rising (DIPR) effect at the middle of the SOI body plays an important role in determining the short-channel effects of SDG SOI MOSFET having a thin and low-doping body.