Abstract
A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H2 concentrations (1% per volume), whereas H2 cracking dominates as H2 concentration is increased further. Electron recombination mechanisms contribute at high dose rates ( >; 100 rad(SiO2)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO2)/s).
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