Abstract
The influence of a few monolayers of crystalline and amorphous Ge3N4 on the Schottky barrier height of n-type Ge has been investigated. Low temperature capacitance–voltage measurements are used to accurately determine the barrier height. Both amorphous and epitaxial Ge3N4 effectively eliminate pinning of the Fermi level at the metal/Ge interface. Metal/Ge3N4/n-Ge contacts therefore show a linear dependence of the Schottky barrier height with metal work function. Our results indicate that the Fermi level unpinning is achieved mainly due to the passivation of interface states related to defects at the metal/Ge interface. Aluminum on amorphous and epitaxial Ge3N4 delivers barrier heights of 0.09 ± 0.05 and 0.0 ± 0.1 eV, respectively, resulting in Ohmic behavior. The formation of epitaxial Ge3N4 requires temperatures above 600°C, whereas amorphous layers can be formed at much lower temperatures. Amorphous Ge3N4 can therefore be used to form Ohmic contacts at a low thermal budget.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
