Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors based on organic polymers and inorganic nanoparticles

Abstract

Mechanisms of radiative recombination in ambipolar light-emitting field-effect transistors with composite active layers based on the PFO organic polymer and inorganic ZnO nanoparticles are considered. Theoretical analysis of the radiative recombination in the accumulation layer of the structure is performed in the framework of a model permitting one to obtain an analytical description of the process. An expression for the total recombination rate has been obtained and numerical calculations have been carried out. Correspondence between the calculation results and experimental data has been obtained for the integral intensity of electrical luminescence in the composite structure under consideration.