Abstract
InAs/InP axial nanowire heterostructures were grown by the Au-assistedvapour–liquid–solid method in a gas source molecular beam epitaxy system. Thenanowire crystal structure and morphology were investigated by transmissionelectron microscopy for various growth conditions (temperature, growth rate,V/III flux ratio). Growth mechanisms were inferred from the InAs and InP segment lengths as afunction of the nanowire diameter. Short InAs segment lengths were found to grow bydepletion of In from the Au particle as well as by direct impingement, while longersegments of InAs and InP grew by diffusive transport of adatoms from the nanowiresidewalls. The present study offers a way to control the lengths of InAs quantum dotsembedded in InP barriers.
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