Abstract
Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1×1020 cm−3, electron mobility of 16.2 cm2/V s, and resistivity of 7.2×10−4 Ω cm were obtained for the deposited AZO film annealed at 600 °C for 1 min in a N2 ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.