Abstract
Both enhanced interface trap buildup and interface trap annealing can occur during elevated temperature irradiation (ETI), depending on the temperature, total dose, and dose rate. In this paper we describe mechanisms that govern the rate-limiting processes of interface trap buildup and annealing during ETI. Hydrogenated oxygen vacancies can facilitate hydrogen dimerization at elevated temperatures. This results in the removal of protons that can create interface traps, so degradation is suppressed. Hydrogen dimerization becomes more competitive with degradation mechanisms as the concentration of protons near the interface increases and/or as temperature increases.
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