Abstract
We present a study of mechanisms for surface hole formation during heterogeneous, metal-on-metal epitaxial growth with application to the system Rh/Ag(0 0 1). Three mechanisms are proposed and investigated via a Monte Carlo kinetics simulation based on a simple model for the atomic-level kinetics. It is found that the dominant mechanism of hole formation in this system involves the growth of vacancy islands via an upward exchange diffusion move. First principles total energy computations confirm the plausibility of the explanation.
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