Abstract
The analysis of methods for calculating the components of thermal conductivity of solid materials is carried out. The problems of using these methods are identified and their assessment is given from the point of view of obtaining reliable results. Experimental data on the temperature dependences of thermoelectric parameters of the main thermoelectric materials (TEMs) used for the manufacturing of Peltier and Seebeck thermoelements are presented. Using the obtained data, we calculated the main components of the thermal conductivity of TEMs (phonon, electronic, and bipolar) in the temperature range from 250 to 1200 K for solid solutions based on Bi, Sb, Pb, and Ge chalcogenides, as well as SiGe obtained by various methods of directional crystallization. The relationship between the mechanisms of heat transfer in TEMs and the temperature dependences of electrical conductivity and thermoelectric power has been established. It is shown that the use of nanostructured TEMs is promising for increasing the thermoelectric figure of merit.
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