Abstract
Zn1−xMgxO films prepared with different x were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1−xMgxO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1−xMgxO film.
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