Mechanisms of electron scattering in (3HgSe)1–x (Al2Se3) x crystals doped with manganese

Abstract

Investigation of electron scattering in (3HgSe)1–x(Al2Se3)x: crystals (NMn ~ 10 cm) at the temperatures Т = 77–300 K, i.e., in a temperature range where the effect of the exchange interaction of conduction electrons with d-electrons of Mn on the kinetic phenomena is weak [1, 2], could be performed using the relations obtained for undoped semiconductors. In the relations reported in [3] for the main kinetic coefficients of a degenerate semiconductor in any magnetic field it is assumed that electron energy E depends on the value of wave vector k only, which covers all the cases of the spherically-symmetric nonparabolic bands. The calculations in [3] are performed within an approximation of relaxation timeτ. The specific dependence of τ on energy Е was not however included into consideration (it is assumed that τ is an arbitrary function of E), so the formulas obtained in [3] are also valid for the case of a mixed scattering mechanism.