Abstract
This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN∕GaN heterostructures. Two stable states are registered in the I-V characteristics of the diodes. The temperature dependences of current and noise behavior are analyzed to understand the contribution of different mechanisms responsible for current formation in the structures. The evolution of the spectral density of the noise current with temperature reveals several recombination-generation components. The mechanisms responsible for the formation of current in AlN∕GaN∕AlN diodes are discussed taking into account the Poole-Frenkel effect.
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