Abstract
Thin film structures of the metal-polymer-Si type have been fabricated. The current-voltage characteristics of these structures versus temperature have been measured and analyzed. The results obtained are treated within such models of charge transport as the Schottky thermionic emission, Pool-Frenkel and hopping mechanisms. The preliminary conclusions about the basic mechanisms of charge transport have been made. The charge carriers transport is explained by the Schottky thermionic emission in the case of the metal-polymer interface and the hopping mechanism in a polymer.
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