Mechanisms of Atomic–Molecular Processes Underlying Si and GaAs Nanowire Crystallization

Abstract

We analyze atomic–molecular processes underlying Si and GaAs nanowire growth. The atomic structure of the crystal–melt interface has been shown to lead to poorer wettability of the (111) Si and $$\left( {\bar {1}\bar {1}\bar {1}} \right)$$ В GaAs faces by metal solvent droplets, Si and GaAs nanowire growth in the 〈111〉 and $$\left\langle {\bar {1}\bar {1}\bar {1}} \right\rangle $$ В directions, and the formation of gallium arsenide crystals with cubic and hexagonal lattices.