Abstract
Mechanisms of leakage current have been investigated in the capacitor consisting of a Ba0.6Sr0.4TiO3 thin film, a Pt top electrode, and a Nb-doped SrTiO3 (STON) bottom electrode. The leakage current shows asymmetric behavior for different bias voltage. For the Pt electrode negatively biased, the leakage current can be explained by modified Schottky emission mechanism, and the barrier height is obtained as 0.44 eV. For the Pt electrode positively biased, the leakage current shows a space-charge-limited current behavior. The trap in dielectric film is regarded as deep traps, and the density of trapped carrier is estimated as about 3.2×1023/m3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
