Abstract
A layer of polyethylene dioxythiophene:polystyrene sulfonic acid (PEDT:PSS) spun onto the surface of an inorganic semiconductor forms a highly asymmetric rectifying junction when a small current is applied and can be permanently open circuited with application of a high current density. This allows the polymer/semiconductor junction to function as a write-once-read-many-times memory element. We use x-ray photoelectron spectroscopy and temperature induced conductivity measurements to study the morphological and chemical changes responsible for the large current-induced conductivity changes. It is found that by applying a large current to the organic-inorganic semiconductor rectifying heterojunction structure Au∕PEDT:PSS∕Si, the ratio of PEDT+ to PSS− near the interface changes due to phase segregation in the presence of both high electric field (>105V∕cm) and temperature. This leads to a decrease in film conductivity by up to six orders of magnitude from its value in the conductive state.
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