Abstract
Silicon oxide (SiOx) films were deposited on Si substrates using APCVD method with silicone oil (S.O.) and ozone (O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ) at low temperature of 200 °C. To reduce the amount of -OH bond formed inevitably in the SiOx films due to its deposition reaction, we tried to clarify deposition mechanism. In this study, the influences of silicone oil and ozone supply on the -OH content was studied, and based on those results, the deposition mechanism was discussed.
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