Year-end Sale % OFF 
Abstract
The aim of this paper is to study the mechanism of vertical correlation of Ge/Si(001) islands in multilayered structures grown by ultrahigh vacuum chemical vapor deposition. We used in situ reflexion high energy electron diffraction, ex situ atomic force microscopy, photoluminescence spectroscopy, and high resolution and analytical field emission transmission electron microscopy in order to determine the morphological properties of the layered structures at each step of their formation. For Si spacer thickness below 90 nm, a roughness is observed above the top of each Ge island. The local composition of the multilayers measured by x-ray nanoanalysis shows an inhomogeneous Ge distribution in the wetting layers and in the islands. The roughness can then be explained by the existence of a difference of Si growth rate over Ge islands and Ge wetting layers. This roughness on the Si cap surface layer leads, on the one hand, to a preferential nucleation of Ge above each buried island, and consequently to the vertical correlation in multilayers, and, on the other hand, to an increase of island density on upper layers.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
