Abstract
The Chemical Vapour Deposition (CVD) of W on Si, using WF 6(g) and Si(s), has been studied by in situ mass spectrometry combined with AES depth profiling for p WF 6 = 24 Pa and 500 < T < 650 K. The process results in W layers with a thickness of 15–20 nm, independent of temperature. A model for the process has been proposed, based on the formation of an intermediate reaction layer, which is formed in case of an excessive WF 6 supply. A mathematical description of the model is in good agreement with the measured data. It shows that both the formation of the reaction layer and the conversion of this layer into W is performed by similar reactions.
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