Abstract
The high x-ray sensitivity of p-type CdTe single crystals under the conditions of ambipolar conduction is interpreted in a model considering local structural changes near GeCd substitutional defects. The model offers detailed insight into the mechanism responsible for the formation of the GeTe center at doping levels above 5.0 × 1015 cm–3 and makes it possible to identify the optimal defect system in CdTe crystals for resistive x-ray detectors.
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