Abstract
Fourier-transform infra-red spectroscopy with frustrated total internal reflection was used to study radiation-induced processes upon the implantation of boron and phosphorus ions into positive FP9120 diazoquinone-novolac photoresist films on silicon. Strengthening of the photoresist adhesion to monocrystalline silicon was found to be caused by the formation of ester linkages between hydroxyl groups on the surface of the silicon wafer oxide layer and carboxyl groups of 1-H-indene-3-carboxylic acid.
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